1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer

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	1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer
	Fang ZD ; Gong Z ; Miao ZH ; Niu ZC ; Shen GD
刊名	journal of infrared and millimeter waves
	2005
卷号	24 期号:5 页码:324-327
关键词	InAs/GaAs quantum dots
ISSN号	1001-9014
通讯作者	fang, zd, beijing polytech univ, optoelect technol lab, beijing 100022, peoples r china.
中文摘要	optical properties and surface structures of inas/caas self-assembled quantum dots (qds) grown on 2 nm in-0.2 ga0.8as and x ml gaas combined strain-buffer layer were investigated systematically by photoluminescence ( pl) and atomic force microscopy (afm). the qd density increased from similar to 1.7 x 10(9) cm(-2) to similar to 3.8 x 10(9) cm(-1) due to the decreasing of the lattice mismatch. the combined layer was of benefit to increasing in incorporated into dots and the average height-to-width ratios, which resulted in the red-shift of the emission peaks. for the sample of x = 10 ml, the ground state transition is shifted to 1350 nm at room temperature.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8444]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fang ZD,Gong Z,Miao ZH,et al. 1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer[J]. journal of infrared and millimeter waves,2005,24(5):324-327.
APA	Fang ZD,Gong Z,Miao ZH,Niu ZC,&Shen GD.(2005).1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer.journal of infrared and millimeter waves,24(5),324-327.
MLA	Fang ZD,et al."1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer".journal of infrared and millimeter waves 24.5(2005):324-327.