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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248 作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/15 Ambipolar current  compact model  gate-drainunderlap  tunneling field-effect transistor (TFET)   Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248 作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan 收藏  |  浏览/下载：0/0  |  提交时间：2020/11/14 Capacitance  SPICE  Tunnel field effect transistors  Ambipolar currents  Compact model  Double gate tunnel fets  Doublegate tunnel fets (DG-TFET)  Effective resistances  Electrical characteristic  Gate drain  Tunneling field-effect transistors   Pressure-sensitive behaviors, mechanisms and model of field assisted quantum tunneling composites 期刊论文 POLYMER, 2017, 卷号: 113, 页码: 105-118 作者:  Ding, Siqi;  Han, Baoguo;  Dong, Xufeng;  Yu, Xun;  Ni, Yiqing 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/02 Conductive polymer composites  Pressure-sensitivity  Quantum tunneling effect  Field emission effect  Sensors   Nano graphite platelets-enabled piezoresistive cementitious composites for structural health monitoring 期刊论文 CONSTRUCTION AND BUILDING MATERIALS, 2017, 卷号: 136, 页码: 314-328 作者:  Sun, Shengwei;  Han, Baoguo;  Jiang, Shan;  Yu, Xun;  Wang, Yanlei 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/02 Nano graphite platelets  Cementitious composites  Electrical resistivity  Piezoresistivity  Tunneling effect   Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High I-ON/I-OFF Ratio and Steep Swing 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhu, Jiadi; Zhao, Yang; Huang, Qianqian; Chen, Cheng; Wu, Chunlei; Jia, Rundong; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Tunnelfield-effect transistor  band-to-band tunneling  heterostructure  I-ON/I-OFF ratio  sub-threshold slope  FIELD-EFFECT TRANSISTORS  V COMPOUND SEMICONDUCTORS   New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Chen, Cheng; Huang, Qianqian; Zhu, Jiadi; Zhao, Yang; Guo, Lingyi; Huang, Ru 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 Amplitude  annealing process  band-to-band tunneling (BTBT) generation rate  nonuniformity  random dopant fluctuation (RDF)  random telegraph noise (RTN)  source doping concentration  tunnel FET (TFET)  FIELD-EFFECT TRANSISTORS  RANDOM DOPANT FLUCTUATION  LINE-EDGE ROUGHNESS  1/F NOISE  ELECTRICAL NOISE  CMOS DEVICES  VARIABILITY  IMPACT  TFET   A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High I-ON/I-OFF Ratio 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhao, Yang; Wu, Chunlei; Huang, Qianqian; Chen, Cheng; Zhu, Jiadi; Guo, Lingyi; Jia, Rundong; Lv, Zhu; Yang, Yuchao; Li, Ming; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Band-to-band tunneling (BTBT)  Hetero-structure  self-adaptively current replenishing  sub-threshold slope  tunnel field-effect transistor   Research and application on tunnel and underground engineering grouting effect of the fuzzy evaluation method 期刊论文 Yanshilixue Yu Gongcheng Xuebao/Chinese Journal of Rock Mechanics and Engineering, 2017, 卷号: 36, 页码: 3431-3439 作者:  Wang, Deming;  Zhang, Qingsong;  Zhang, Xiao;  Li, Zhipeng;  Zhao, Peng 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/11 AHP  Fault fracture zone  Fuzzy comprehensive evaluation  Grouting effect  Tunneling engineering   Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate 期刊论文 2017, 卷号: 12, 页码: 198 作者:  Li, Wei;  Liu, Hongxia;  Wang, Shulong;  Chen, Shupeng;  Yang, Zhaonian 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/20 Band-to-band tunneling (BTBT)  T-shaped gate  Tunneling field-effect transistor (TFET)  Heterojunction   Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor 期刊论文 2017, 卷号: 111, 页码: 1226-1232 作者:  Yang, Zhaonian;  Zhang, Yue;  Yang, Yuan;  Yu, Ningmei 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20 Band-to-band tunneling (BTBT)  Electric field  Tunnel field effect transistor (TFET)  U-shaped channel TFET (U-TFET)