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Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Research on Converting CAD Model to MCNP Model Based on STEP File 会议论文
作者:  Yang, Jiaming;  Tian, Yanshan;  He, Shuan;  Wang, Junqiong;  Zhou, Qingguo
收藏  |  浏览/下载：13/0  |  提交时间：2018/08/20
Research on Converting CAD Model to MCNP Model Based on STEP File 会议论文
作者:  Zhang, Xunchao;  Yang, Jiaming;  Tian, Yanshan;  He, Shuan;  Wang, Junqiong
收藏  |  浏览/下载：15/0  |  提交时间：2018/08/20
Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface 会议论文
作者:  Meng, Q.Q.;  Liu, C.Y.;  Wang, H.;  Ang, K.S.;  Manoj, K.
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/03
Ultra-compact optical 90 degrees hybrid based on a wedge-shaped 2 x 4 MMI coupler and a 2 x 2 MMI coupler in silicon-on-insulator 期刊论文
光学快报, 2013
Yang, Wei; Yin, Mei; Li, Yanping; Wang, Xingjun; Wang, Ziyu
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13
Influence of the hydrogen implantation power density on ion cutting of Ge 期刊论文
http://dx.doi.org/10.1116/1.4817756, 2013
Ruan, Yujiao; Lin, Wang; Chen, Songyan; Li, Cheng; Lai, Hongkai; Huang, Wei; Li, Jun; 陈松岩; 李成; 赖虹凯; 黄巍; 李俊
收藏  |  浏览/下载：2/0  |  提交时间：2015/07/22
Research on Converting CAD Model to MCNP Model Based on STEP File 会议论文
International Joint Conference on Awareness Science and Technology and Ubi-Media Computing (iCAST-UMEDIA), Aizuwakamatsu, JAPAN, NOV 02-04, 2013
作者:  Yang, JM;  Tian, YS;  He, S;  Wang, JQ;  Zhou, QG
收藏  |  浏览/下载：2/0  |  提交时间：2017/01/18
Synthesis and optical properties of InP quantum dot/nanowire heterostructures 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 卷号: Vol.210 No.9, 页码: 1898-1902
作者:  Ren, Pinyun;  Xu, Jinyou;  Wang, Yicheng;  Zhuang, Xiujuan;  Zhang, Qinglin
收藏  |  浏览/下载：1/0  |  提交时间：2020/01/05
高In组分InGaAs薄膜的分子束外延生长及其表面分析 期刊论文
2013, 卷号: 27, 期号: 22, 页码: 29-32
作者:  罗子江;  周勋;  郭祥;  王继红;  魏文喆
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31
InAs  InP  InGaAs  MBE  STM  表面形貌  

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