Influence of the hydrogen implantation power density on ion cutting of Ge

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	Influence of the hydrogen implantation power density on ion cutting of Ge
	Ruan, Yujiao ; Lin, Wang ; Chen, Songyan ; Li, Cheng ; Lai, Hongkai ; Huang, Wei ; Li, Jun ; Chen SY(陈松岩) ; Li C(李成) ; Lai HK(赖虹凯) ; Huang W(黄巍) ; Li J(李俊)
刊名	http://dx.doi.org/10.1116/1.4817756
	2013
关键词	LAYER TRANSFER SILICON GERMANIUM TEMPERATURE TECHNOLOGY INP
英文摘要	National Natural Science Foundation of China [61176050, 61036003, 61176092]; Fundamental Research Funds of Fujian Province of China [2012H0038]; National Basic Research Program of China [2012CB933503]; Fundamental Research Funds for the Central Universities of China [2010121056]; In this work, surface morphologies, strain status, and defect evolution were investigated for Ge wafers after hydrogen implantation with different implantation power densities. Hydrogen implantation generates strain in the Ge lattice at lower implantation power densities, and this strain is crucial for a successful ion cut. At higher implantation power densities, the strain is relaxed and mosaic structures are seen in the as-implanted samples, where platelet defects grow, propagate, and coalesce owing to the self-annealing effect during hydrogen implantation. This defect evolution behavior results in either no blistering or formation of discrete blisters after annealing of the implanted Ge samples, rather than the desired ion cut. (C) 2013 American Vacuum Society.
语种	英语
出版者	A V S AMER INST PHYSICS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91846]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Ruan, Yujiao,Lin, Wang,Chen, Songyan,et al. Influence of the hydrogen implantation power density on ion cutting of Ge[J]. http://dx.doi.org/10.1116/1.4817756,2013.
APA	Ruan, Yujiao.,Lin, Wang.,Chen, Songyan.,Li, Cheng.,Lai, Hongkai.,...&李俊.(2013).Influence of the hydrogen implantation power density on ion cutting of Ge.http://dx.doi.org/10.1116/1.4817756.
MLA	Ruan, Yujiao,et al."Influence of the hydrogen implantation power density on ion cutting of Ge".http://dx.doi.org/10.1116/1.4817756 (2013).