CORC

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CORC

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High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin
收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14
Growth temperature dependences of inn films grown by mocvd 期刊论文
Applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152
作者:  Yang, Cuibai;  Wang, Xiaoliang;  Xiao, Hongling;  Zhang, Xiaobin;  Hua, Guoxin
收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12
Inn  Mocvd  Mobility  
Photovoltaic effects in ingan structures with p-n junctions 期刊论文
Physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 12, 页码: 4288-4291
作者:  Yang, Cuibai;  Wang, Xiaoliang;  Xiao, Hongling;  Ran, Junxue;  Wang, Cuimei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition 期刊论文
Microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
作者:  Wang, Xiaoyan;  Wang, Xiaoliang;  Hu, Guoxin;  Wang, Baozhu;  Ma, Zhiyong
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd 期刊论文
Journal of crystal growth, 2007, 卷号: 298, 页码: 835-839
作者:  Wang, Xiaoliang;  Hu, Guoxin;  Ma, Zhiyong;  Ran, Junxue;  Wang, Cuimei
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate 期刊论文
Journal of crystal growth, 2007, 卷号: 298, 页码: 791-793
作者:  Wang, Xiaoliang;  Wang, Cuimei;  Hu, Guoxin;  Mao, Hongling;  Fang, Cebao
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
2DEG  
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29

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