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	Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
	Liu Z (Liu Zhe) ; Wang XL (Wang Xiaoliang) ; Wang JX (Wang Junxi) ; Hu GX (Hu Guoxin) ; Guo LC (Guo Lunchun) ; Li JP (Li Jianping) ; Li JM (Li Jinmin) ; Zeng YP (Zeng Yiping)
刊名	journal of crystal growth
	2007
卷号	298 sp.iss.si期号:0页码:281-283
关键词	characterization
ISSN号	issn: 0022-0248
通讯作者	wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn
中文摘要	low temperature (lt) aln interlayer and insertion of superlattice are two effective methods to reduce crack and defects for gan grown on si substrate. in this paper, the influence of two kinds of buffer on stress, morphology and defects of gan/si are studied and discussed. the results measured by optical microscope and raman shift show that insertion of superlattice is more effective than insertion of lt-aln in preventing the formation of cracks in gan grown on si substrate. cross-sectional tem images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9602]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Z ,Wang XL ,Wang JX ,et al. Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD[J]. journal of crystal growth,2007,298 sp.iss.si(0):281-283.
APA	Liu Z .,Wang XL .,Wang JX .,Hu GX .,Guo LC .,...&Zeng YP .(2007).Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD.journal of crystal growth,298 sp.iss.si(0),281-283.
MLA	Liu Z ,et al."Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD".journal of crystal growth 298 sp.iss.si.0(2007):281-283.

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