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	Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition
	Wang, Xiaoyan; Wang, Xiaoliang; Hu, Guoxin; Wang, Baozhu; Ma, Zhiyong; Xiao, Hongling; Wang, Cuimei; Ran, Junxue; Li, Jianping
刊名	Microelectronics journal
	2007-08-01
卷号	38期号:8-9页码:838-841
关键词	Alxga1-xn Mocvd High al content Photodetector
ISSN号	0026-2692
DOI	10.1016/j.mejo.2007.07.090
通讯作者	Wang, xiaoyan(xywang@mail.semi.ac.cn)
英文摘要	The epitaxial growth of alxga1-xn film with high al content by metalorganic chemical vapor deposition (mocvd) has been accomplished. the resulting al content was determined to be 54% by high resolution x-ray diffraction (hrxrd) and vegard's law. the full width at half maximum (fwhm) of the algan (0002) hrxrd rocking curve was about 597 arcsec. atomic force microscopy (afm) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed alspecies. from transmittance measurement, the cut-off wavelength was around 280 nm and fabry-perot fringes were clearly visible in the transmission region. cathodoluminescence (cl) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (c) 2007 elsevier ltd. all rights reserved.
WOS关键词	ALGAN FILMS ; SAPPHIRE ; STRAIN ; INTERLAYERS
WOS研究方向	Engineering ; Science & Technology - Other Topics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000250604100005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427161
专题	半导体研究所
通讯作者	Wang, Xiaoyan
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, Xiaoyan,Wang, Xiaoliang,Hu, Guoxin,et al. Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition[J]. Microelectronics journal,2007,38(8-9):838-841.
APA	Wang, Xiaoyan.,Wang, Xiaoliang.,Hu, Guoxin.,Wang, Baozhu.,Ma, Zhiyong.,...&Li, Jianping.(2007).Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition.Microelectronics journal,38(8-9),838-841.
MLA	Wang, Xiaoyan,et al."Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition".Microelectronics journal 38.8-9(2007):838-841.

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