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Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer 期刊论文
NANOPHOTONICS, 2020, 卷号: 9, 期号: 3, 页码: 667-674
作者:  Feng Liang ;   Degang Zhao;   Desheng Jiang;   Wenjie Wang;   Zongshun Liu;   Jianjun Zhu;   Ping Chen;   Jing Yang and Liqun Zhang
收藏  |  浏览/下载:23/0  |  提交时间:2021/11/05
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN 期刊论文
NANOSCALE RESEARCH LETTERS, 2020, 卷号: 15, 期号: 1, 页码: 38
作者:  Yuheng Zhang;  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Jing Yang ;  Shuangtao Liu
收藏  |  浏览/下载:12/0  |  提交时间:2021/11/05
Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2020, 卷号: 49, 期号: 6, 页码: 3877-3882
作者:  Wei Liu;   Feng Liang;   Degang Zhao;   Jing Yang;   Desheng Jiang;   Jianjun Zhu ;   Zongshun Liu
收藏  |  浏览/下载:12/0  |  提交时间:2021/06/28
Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment 期刊论文
APPLIED SURFACE SCIENCE, 2020, 卷号: 505, 页码: 144283
作者:  Liyuan Peng ;   Degang Zhao;   Jianjun Zhu ;   Wenjie Wang;   Feng Liang;   Desheng Jiang ;  Zongshun Liu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
收藏  |  浏览/下载:11/0  |  提交时间:2021/12/17
Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文
Materials Research Express, 2019, 卷号: 6, 页码: 076203
作者:  Wei Liu ;  Feng Liang ;  Degang Zhao ;  Jing Yang ;  Desheng Jiang ;  Jianjun Zhu ;   Zongshun Liu
收藏  |  浏览/下载:3/0  |  提交时间:2020/07/31
Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280
作者:  Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng
收藏  |  浏览/下载:7/0  |  提交时间:2020/07/31
Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88
作者:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang
收藏  |  浏览/下载:6/0  |  提交时间:2020/08/05
Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080
作者:  Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang
收藏  |  浏览/下载:8/0  |  提交时间:2020/08/04
Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文
Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153
作者:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
收藏  |  浏览/下载:7/0  |  提交时间:2020/07/31
Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951
作者:  FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG
收藏  |  浏览/下载:4/0  |  提交时间:2020/07/31


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