Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

	Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer
	Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang
刊名	NANOPHOTONICS
	2020
卷号	9 期号:3 页码:667-674
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30511]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang. Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer[J]. NANOPHOTONICS,2020,9(3):667-674.
APA	Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang.(2020).Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer.NANOPHOTONICS,9(3),667-674.
MLA	Feng Liang ; Degang Zhao; Desheng Jiang; Wenjie Wang; Zongshun Liu; Jianjun Zhu; Ping Chen; Jing Yang and Liqun Zhang."Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer".NANOPHOTONICS 9.3(2020):667-674.