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| Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 822, 页码: 153571 作者: J. Yang ; D.G. Zhao; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang; S.T. Liu; Y. Xing
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:21/0  |  提交时间:2021/06/17 |
| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文 Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813 作者: J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2020/07/31 |
| The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文 Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177 作者: H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2020/07/31 |
| The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186 作者: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2020/07/31 |
| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文 OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17 作者: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2019/11/19 |
| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40 作者: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2019/11/19 |
| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文 Optical Materials, 2018, 卷号: 86, 页码: 460-463 作者: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2019/11/19 |
| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695 作者: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:12/0  |  提交时间:2019/11/19 |
| Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文 Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248 作者: H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2019/11/19 |
| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 作者: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:19/0  |  提交时间:2018/11/30 |