The compensation role of deep defects in the electric properties of lightly Si-doped GaN

	The compensation role of deep defects in the electric properties of lightly Si-doped GaN
	S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
刊名	Journal of Alloys and Compounds
	2019
卷号	773 页码:1182-1186
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29634]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li. The compensation role of deep defects in the electric properties of lightly Si-doped GaN[J]. Journal of Alloys and Compounds,2019,773:1182-1186.
APA	S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li.(2019).The compensation role of deep defects in the electric properties of lightly Si-doped GaN.Journal of Alloys and Compounds,773,1182-1186.
MLA	S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li."The compensation role of deep defects in the electric properties of lightly Si-doped GaN".Journal of Alloys and Compounds 773(2019):1182-1186.