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科研机构
兰州理工大学 [13]
内容类型
期刊论文 [11]
会议论文 [2]
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2021 [6]
2019 [3]
2015 [1]
2014 [3]
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专题:兰州理工大学
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Electronic property of intrinsic point defect system on beta-Si3N4 (0001) surface
期刊论文
MODERN PHYSICS LETTERS B, 2021, 卷号: 35, 期号: 21
作者:
Li, Lingxia
;
Lu, Xuefeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2021/10/14
beta-Si3N4
electrical property
vacancy
interstitial defect
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Longitudinal Deformation Model and Parameter Analysis of Canal Lining under Nonuniform Frost Heave
期刊论文
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2021, 卷号: 2021
作者:
He, Pengfei
;
Dong, Jianhua
;
Ren, Xin
;
Wu, Xiaolei
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2021/10/14
Research on the electronic properties of graphene/β-Si3N4 (0001) heterojunction
期刊论文
Vacuum, 2021, 卷号: 184
作者:
Cui, Zhihong
;
Lu, Xuefeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2021/03/02
Binding energy
Electric fields
Electronic properties
Energy gap
Heterojunctions
Microelectronics
Silicon
Van der Waals forces
Built-in electric fields
DTF calculations
Electronic properties of graphene
Electrons and holes
Equilibrium interlayers
Interlayer spacings
Micro-electronic devices
Population analysis
Research on the electronic properties of graphene/beta-Si3N4 (0001) heterojunction
期刊论文
VACUUM, 2021, 卷号: 184, 页码: -
作者:
Cui, Zhihong
;
Lu, Xuefeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2021/03/12
GRAPHENE
MONOLAYER
GROWTH
SURFACE
SYSTEM
FILMS
Turning electronic performance and Schottky barrier of graphene/beta-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
VACUUM, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/06/03
Effects of vacancy on the electronic and optical properties of beta-Si3N4 by first-principles
期刊论文
MODERN PHYSICS LETTERS B, 2019, 卷号: 33, 期号: 36
作者:
Lu, Xuefeng
;
Luo, Jianhua
;
Yang, Panfeng
;
Ren, Junqiang
;
Guo, Xin
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2020/06/02
beta-Si3N4
first principles
vacancy
electronic structure
optical properties
Density functional theory capture of electronic structures and optical properties of vacancy doped 3C-SiC systems
期刊论文
MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6, 期号: 11
作者:
Lu, Xuefeng
;
Yang, Panfeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2020/06/02
3C-SiC
electronic structures
optical properties
vacancy doping
first-principles simulations
Tensile mechanical performance of Ni-Co alloy nanowires by molecular dynamics simulation
期刊论文
RSC ADVANCES, 2019, 卷号: 9, 期号: 44, 页码: 25817-25828
作者:
Lu, Xuefeng
;
Yang, Panfeng
;
Luo, Jianhua
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/11/15
Binary alloys
Distribution functions
Drops
Elastic moduli
Molecular dynamics
Nanowires
Nickel alloys
Yield stress
Reliability assessment of multiple NC machine tools based on three-parameter Weibull Process model
会议论文
Guangzhou, China, August 6, 2014 - August 8, 2014
作者:
Ren, Lina
;
Li, Jianhua
;
Wang, Xianzhi
;
Lei, Chunli
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/11/15
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