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浏览/检索结果: 共20条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions 其他 2016-01-01 Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 OXIDE  MODEL  BIAS  DEGRADATION  TECHNOLOGY  DEFECTS  STACKS  NOISE  PBTI  HFO2   Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions 期刊论文 International Conference on Solid State Devices and Materials (SSDM), 2016 Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 OXIDE  MODEL  BIAS  DEGRADATION  TECHNOLOGY  DEFECTS  STACKS  NOISE  PBTI  HFO2   Evaulation the Degradation in nMOSFETs with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method 其他 2016-01-01 Li, Yun; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Jiang, Hai; Zhang, Xing; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Investigation the Impact of Composition on the Performance of SiGe Nanowire pMOSFETs by Different Simulation Methods 其他 2016-01-01 Xianle Zhang; Xiaoyan Liu; Yijiao Wang; Longxiang Yin; Gang Du 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 drift  Poisson  solver  SiGe  default  deviation  beyond  drain  calibration  executed  drift  Poisson  solver  SiGe  default  deviation  beyond  drain  calibration  executed   A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Liu, Fei; Wang, Yijiao; Liu, Xiaoyan; Wang, Jian; Guo, Hong 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Field effect transistor  MoS2  orientation dependence  FIELD-EFFECT TRANSISTORS   Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method 其他 2015-01-01 Li, Yun; Wang, Yijiao; Jiang, Hai; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Wang, Yijiao; Al-Ameri, Talib; Wang, Xingsheng; Georgiev, Vihar P.; Towie, Ewan; Amoroso, Salvatore Maria; Brown, Andrew R.; Cheng, Binjie; Reid, David; Riddet, Craig; Shifren, Lucian; Sinha, Saurabh; Yeric, Greg; Aitken, Robert; Liu, Xiaoyan; Kang, Jinfeng; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 CMOS  electrostatics  nanowire transistors (NWs)  performance  quantum effects  TCAD  STATISTICAL VARIABILITY  INVERSION-LAYERS  GATE  CMOS  GENERATION  ELECTRON  DENSITY  FINFETS  DEVICES  MOSFETS   3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling 其他 2015-01-01 Li, Yun; Lun, Zhiyuan; Huang, Peng; Wang, Yijiao; Jiang, Hai; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 3D KMC Reliability Simulation of Nano-Scaled HKMG nMOSFETs with Multiple Traps Coupling 其他 2015-01-01 Li, Yun; Lun, Zhiyuan; Huang, Peng; Wang, Yijiao; Jiang, Hai; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 HKMG  nMOSFETs  3D  kinetic Monte-Carlo  multiple traps  coupling  trap generation/recombination  capture time  emission time  threshold voltage shift  trapping  detrapping  PBTI   Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching 期刊论文 ieee 纳米技术汇刊, 2014 Huang, Peng; Wang, Yijiao; Li, Haitong; Gao, Bin; Chen, Bing; Zhang, Feifei; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：8/0  |  提交时间：2015/11/10 AC switching  compact model  high speed  low voltage  resistive random access memory (RRAM)  voltage-time dilemma  RESET MECHANISM  BIPOLAR RRAM  MEMORY  MODEL  DEVICES