A Theoretical Investigation of Orientation-Dependent Transport in   Monolayer MoS2 Transistors at the Ballistic Limit

doi:10.1109/LED.2015.2472297

CORC > 北京大学 > 信息科学技术学院

	A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
	Liu, Fei ; Wang, Yijiao ; Liu, Xiaoyan ; Wang, Jian ; Guo, Hong
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	Field effect transistor MoS2 orientation dependence FIELD-EFFECT TRANSISTORS
DOI	10.1109/LED.2015.2472297
英文摘要	Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to sub-band transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths.; University Grants Council through Government of Hong Kong [AoE/P-04/08]; National Key Basic Research Program [2011CBA00604]; National Natural Science Foundation of China [11374246]; Natural Sciences and Engineering Research Council of Canada; SCI(E); EI; ARTICLE; fliu003@gmail.com; 10; 1091-1093; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/415931]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Fei,Wang, Yijiao,Liu, Xiaoyan,et al. A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Liu, Fei,Wang, Yijiao,Liu, Xiaoyan,Wang, Jian,&Guo, Hong.(2015).A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit.IEEE ELECTRON DEVICE LETTERS.
MLA	Liu, Fei,et al."A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit".IEEE ELECTRON DEVICE LETTERS (2015).