CORC

在结果中检索

CORC

浏览/检索结果: 共146条，第1-10条 帮助

限定条件                    
已选(0)清除 条数/页：   排序方式：
Design of a bionic olfactory, tactile integrated system and its application in chicken meat quality inspection 会议论文
4th International Conference of Bionic Engineering, ICBE 2013, August 13, 2013 - August 16, 2013, Nanjing, China
Chang Z. Y.; Chen D. H.; Zhang Z. H.; Tong Y. Y.; Tong J.; Dai L.
收藏  |  浏览/下载：80/0  |  提交时间：2015/04/27
Applications of multi-point mirror supporting 会议论文
2013 2nd International Conference on Sensors, Measurement and lntelligent Materials, ICSMIM 2013, November 16, 2013 - November 17, 2013, Guangzhou, China
Zhuo R. S.; Zhang D. G.
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/27
Region weighted wavelet fusion method for partial focusing image 会议论文
2013 4th International Conference on Advances in Materials and Manufacturing, ICAMMP 2013, December 18, 2013 - December 19, 2013, Kunming, China
Wu D.; Dai L.; Bai X. W.; Wang Z. Q.; Zhang Y. Y.
收藏  |  浏览/下载：12/0  |  提交时间：2015/04/27
GaSe damage threshold under IR pulse pumping 会议论文
XIX International Symposium on High-Power Laser Systems and Applications 2012, September 10, 2012 - September 14, 2012, Istanbul, Turkey
Guo J.; Xie J.-J.; Zhang L.; Chen F.; Jiang K.; Alexeev S. V.; Andreev Y. M.; Kokh K. A.; Lanskii G. V.; Losev V. F.; Lubenko D. M.; Shaiduko A. V.; Svetlichnyi V. A.
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15
Simulation test system of CCD signal processor based on FPGA 会议论文
2nd International Conference on Mechatronics and Applied Mechanics, ICMAM 2012, December 8, 2012 - December 9, 2012, Taiwan
Zhang D.; Liu D.-B.
收藏  |  浏览/下载：14/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：37/0  |  提交时间：2014/05/15
Solar blind ultraviolet photodetectors based on MgZnO thin films 会议论文
Advanced Optoelectronics for Energy and Environment, AOEE 2013, May 25, 2013 - May 26, 2013, Wuhan, China
Zhang Z. Z.; Wang L. K.; Han S.; Zheng J.; Xie X. H.; Shen D. Z.
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15
Simulation test system of CCD signal processor based on FPGA (EI CONFERENCE) 会议论文
2nd International Conference on Mechatronics and Applied Mechanics, ICMAM 2012, December 8, 2012 - December 9, 2012, Taiwan
Zhang D.; Liu D.-B.
收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25
Simulation test system of CCD signal processor based on FPGA is proposed. Field-programmable gate array (FPGA) is applied as control processing core and used in the aerospace upgrade screening of industrial grade signal processor. The system functional composition and working principle were introduced in detail. Actually evaluation and testing system was completed with integrating the forty signal processor in a single board. The system has been successfully applied in the dynamic build-in screening test of industrial grade signal processor XRD98L63  the system work stably and reliability. Test result is zero on the nonconforming product rate  satisfying the qualification that single batch screening nonconforming rate is less than 5%  build-in screening of industrial grade components for the space load applications is implemented. (2013) Trans Tech Publications  Switzerland.  
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Determination of Director Profile in the Vertical Alignment Nematic Liquid Crystal Cell by the Full Leaky Guided Mode Technique 会议论文
2012
Xing H. Y.; Ye W. J.; Wu N. F.; Si L. B.; Zhang Z. D.
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28

©版权所有 ©2017 CSpace - Powered by CSpace