GaSe damage threshold under IR pulse pumping

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	GaSe damage threshold under IR pulse pumping
	Guo J. ; Xie J.-J. ; Zhang L. ; Chen F. ; Jiang K. ; Alexeev S. V. ; Andreev Y. M. ; Kokh K. A. ; Lanskii G. V. ; Losev V. F. ; Lubenko D. M. ; Shaiduko A. V. ; Svetlichnyi V. A.
	2013
会议名称	XIX International Symposium on High-Power Laser Systems and Applications 2012, September 10, 2012 - September 14, 2012
会议地点	Istanbul, Turkey
英文摘要	Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9m OPG) and ns (2. 79 Er 3+:YSGG and 10.6m CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping. 2013 SPIE.
收录类别	EI
会议录	XIX International Symposium on High-Power Laser Systems and Applications 2012, September 10, 2012 - September 14, 2012
会议录出版者	SPIE
会议录出版地	Istanbul, Turkey
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40977]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Guo J.,Xie J.-J.,Zhang L.,et al. GaSe damage threshold under IR pulse pumping[C]. 见:XIX International Symposium on High-Power Laser Systems and Applications 2012, September 10, 2012 - September 14, 2012. Istanbul, Turkey.