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Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.  
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15
The research of the accurate measure of static transfer function for the TDI CCD camera (EI CONFERENCE) 会议论文
3rd International Photonics and OptoElectronics Meetings, POEM 2010, November 2, 2010 - November 5, 2010, Wuhan, China
Guo-Ning L.; Long-Xu J.; Jian-Yue R.; Wen-Hua W.; Shuang-Li H.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
In the test course of static transfer function of TDI CCD camera  because of the influence that gets environmental and artificial etc. factor  the value of static transfer function measured at any time is between unceasing fluctuation  so  make accuracy reduce. To solve this problem  a kind of accurate measurement technique of static transfer function is put forward. First  before carrying out the measure of static quiet of transfer function  the best test point of transfer function of the TDI CCD camera must be determined  it is parallel to guarantee the rectangle target surface of parallel optical pipe and camera focal plane maintenance parallel  and again guarantee target strip in rectangle target and TDI CCD in camera focal plane maintenance vertical. TDI CCD catches rectangle target image  per 1000 lines of target mark image as a measures sample of static transfer function  exclude because of atmosphere tremble twisted  vague rectangle target mark image  retain 500 distinct and steady target mark image as measure sample set. Then  calculate the static transfer function of each measure sample respectively  take the average of all static quiet transfer function in measure sample set as the static transfer function of camera. Finally  the measure of the static transfer function for TDI CCD camera makes error analysis. Experimental results indicate that the value of the static transfer function of TDI CCD camera measured with this kind of method is 0.2923  with before measurement technique comparison  the value of static transfer function has raised 0.02  makes the accuracy of the measure of static transfer function have gotten raising.  
Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers (EI CONFERENCE) 会议论文
Semiconductor Lasers and Applications IV, October 18, 2010 - October 19, 2010, Beijing, China
Qin L.; Ye S.; Hu Y.; Zhang N.; Ning Y.; Liu Y.; Wang L.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25
Based on the modified coupled-wave theory  the emission characteristics  including threshold gain  photon density distribution in the cavity  and external differential quantum efficiency for second-order DFB lasers are investigated. Numerical simulation results show that for given device structure with wavelength of 1.55 m  the feedback coupling coefficient and the surface radiation coupling coefficient of the second-order grating have great influence on the emission characteristics of the device. By choosing different duty cycles of the grating  we can change the two coupling coefficients  which affect the emission characteristics. For an overall consideration  an optimal duty cycle of 0.43 is chosen. The optimized results show that the device works without degeneracy modes and spatial burning hole. Besides  the side-mode suppress ratio (SMSR) and external differential quantum efficiency reach as high as 42 dB and 47%  respectively. 2010 SPIE.  
Theoretical Analysis of Emission Characteristics of Second-order Distributed Feedback Semiconductor Lasers 会议论文
2010
Qin L.; Ye S. J.; Hu Y. S.; Zhang N.; Ning Y. Q.; Liu Y.; Wang L. J.
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/28
A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Cui J.; Ning Y.; Li T.; Zhang Y.; Liu G.; Zhang X.; Wang Z.; Shi J.; Kong P.; Qin L.; Liu Y.; Wang L.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.  
Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liang X.; Qin L.; He C.; Ma Q.; Ning Y.; Wang L.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
Central hole effect on Whispering-Gallery-Mode of triangular lattice photonic crystal microcavity (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liu G.; Ning Y.; Li T.; Cui J.; Zhang Y.; Zhang X.; Wang Z.; Wang L.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
High power VCSEL device with periodic gain active region - art. no. 67820O 会议论文
2007
Ning Y.; Qin L.; Sun Y.; Li T.; Cui J.; Peng B.; Liu G.; Zhang Y.; Liu Y.; Wang L.; Cui D.; Xu Z.
收藏  |  浏览/下载：7/0  |  提交时间：2013/03/28

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