QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：208/60  |  提交时间：2010/03/29 4H-SiC  LPCVD homoepitaxial growth  thermal oxidization  MOS structures  HOT-WALL CVD   Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文 journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278 Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：89/0  |  提交时间：2010/03/17 4H-SiC   Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, GS; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：134/34  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：136/48  |  提交时间：2010/03/29 SI(111)  ALN