Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

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	Electrical properties and electroluminescence of 4H-SiC p-n junction diodes
	Sun, GS ; Zhang, YX ; Gao, X ; Wang, L ; Zhao, WS ; Zeng, YP ; Li, JM
刊名	journal of rare earths
	2004
卷号	22 sp.iss.si 期号:0 页码:275-278
关键词	4H-SiC
ISSN号	1002-0721
通讯作者	sun, gs, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: gshsun@red.semi.ac.cn
中文摘要	homoepitaxial growth of 4h-sic on off-oriented si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall cvd (lp-hwcvd) system with a horizontal air-cooled quartz tube at around 1500 degreesc and 1.33 x 10(4) pa by employing sih4 + c2h4 + h-2. in-situ doping during growth was carried out by adding nh3 gas into the precursor gases. it was shown that the maximum hall mobility of the undoped 4h-sic epilayers at room temperature is about 430 cm(2) (.) v-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the n-doped 4h-sic epilayer obtained at nh3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) v-1 (.) s(-1). sic p-n junctions were obtained by epitaxially growing n-doped 4h-sic epilayers on al-doped 4h-sic substrates. the c - v characteristics of the diodes were linear in the 1/c-3 - v coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 ev. the room temperature electroluminescence spectra of 4h-sic p-n junctions are studied as a function of forward current. the d-a pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the d-a pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. the p-n junctions could operate at temperature of up to 400 degreesc, which provides a potential for high-temperature applications.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8870]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, GS,Zhang, YX,Gao, X,et al. Electrical properties and electroluminescence of 4H-SiC p-n junction diodes[J]. journal of rare earths,2004,22 sp.iss.si(0):275-278.
APA	Sun, GS.,Zhang, YX.,Gao, X.,Wang, L.,Zhao, WS.,...&Li, JM.(2004).Electrical properties and electroluminescence of 4H-SiC p-n junction diodes.journal of rare earths,22 sp.iss.si(0),275-278.
MLA	Sun, GS,et al."Electrical properties and electroluminescence of 4H-SiC p-n junction diodes".journal of rare earths 22 sp.iss.si.0(2004):275-278.