Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

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	Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
	Sun, GS ; Ning, J ; Zhang, YX ; Gao, X ; Wang, L ; Zhao, WS ; Zeng, YP ; Li, JM
	2004
会议名称	7th international conference on solid-state and integrated circuits technology
会议日期	oct 18-21, 2004
会议地点	beijing, peoples r china
关键词	4H-SiC LPCVD homoepitaxial growth thermal oxidization MOS structures HOT-WALL CVD
页码	vols 1- 3 proceedings: 2349-2352
通讯作者	sun, gs, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	homoepitaxial growth of 4h-sic on off-oriented n-type si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (lpcvd) reactor with sih4 and c2h4 at temperature of 1500 c and pressure of 20 torr. the surface morphology and intentional in-situ nh3 doping in 4h-sic epilayers were investigated by using atomic force microscopy (afm) and secondary ion mass spectroscopy (sims). thermal oxidization of 4h-sic homoepitaxial layers was conducted in a dry o-2 and h-2 atmosphere at temperature of 1150 c. the oxide was investigated by employing x-ray photoelectron spectroscopy (xps). 4h-sic mos structures were obtained and their c-v characteristics were presented.
英文摘要	homoepitaxial growth of 4h-sic on off-oriented n-type si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (lpcvd) reactor with sih4 and c2h4 at temperature of 1500 c and pressure of 20 torr. the surface morphology and intentional in-situ nh3 doping in 4h-sic epilayers were investigated by using atomic force microscopy (afm) and secondary ion mass spectroscopy (sims). thermal oxidization of 4h-sic homoepitaxial layers was conducted in a dry o-2 and h-2 atmosphere at temperature of 1150 c. the oxide was investigated by employing x-ray photoelectron spectroscopy (xps). 4h-sic mos structures were obtained and their c-v characteristics were presented.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:34z (gmt). no. of bitstreams: 1 2437.pdf: 205995 bytes, checksum: 49be8168ddaa8ea37bffcd064888da65 (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.
会议录	2004 7th international conference on solid-state and integrated circuits technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8511-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10108]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, GS,Ning, J,Zhang, YX,et al. Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004.