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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu
  收藏 | 浏览/下载：25/0 | 提交时间：2018/11/30 |
| Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu
收藏 | 浏览/下载：30/0 | 提交时间：2018/11/30 |
| Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
作者: Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang
收藏 | 浏览/下载：40/0 | 提交时间：2018/07/11 |
| Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi
收藏 | 浏览/下载：28/0 | 提交时间：2018/07/11 |
| Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
收藏 | 浏览/下载：34/0 | 提交时间：2018/07/11 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang
收藏 | 浏览/下载：32/0 | 提交时间：2018/07/11 |
| Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
收藏 | 浏览/下载：21/0 | 提交时间：2018/07/11 |
| Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
收藏 | 浏览/下载：32/0 | 提交时间：2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li
收藏 | 浏览/下载：28/0 | 提交时间：2018/07/11 |
| Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文
journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li
收藏 | 浏览/下载：12/0 | 提交时间：2017/03/10 |
