Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes

	Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes
	J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu
刊名	Scientific Reports
	2017
卷号	7 页码:44850
学科主题	光电子学
公开日期	2018-11-30
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28788]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J. Yang,D. G. Zhao,D. S. Jiang,et al. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes[J]. Scientific Reports,2017,7:44850.
APA	J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&H. Yang.(2017).Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes.Scientific Reports,7,44850.
MLA	J. Yang,et al."Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes".Scientific Reports 7(2017):44850.