Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

	Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
	Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Xiang Li; Feng Liang; Wei Liu; Shuangtao Liu
刊名	IEEE Photonics Journal
	2017
卷号	9 期号:2 页码:2300108
学科主题	光电子学
公开日期	2018-11-30
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28785]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Jing Yang,Degang Zhao,Desheng Jiang,et al. Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes[J]. IEEE Photonics Journal,2017,9(2):2300108.
APA	Jing Yang.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Mo Li.(2017).Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes.IEEE Photonics Journal,9(2),2300108.
MLA	Jing Yang,et al."Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes".IEEE Photonics Journal 9.2(2017):2300108.