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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2013    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory 期刊论文 应用物理杂志, 2013 Zhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 CO2 FLUID TREATMENT  HOPPING CONDUCTION  OXIDE  DEVICES  RRAM  NANOCRYSTALS  BIPOLAR  ORIGIN   Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process 期刊论文 应用物理学快报, 2013 Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device 期刊论文 ieee electron device letters, 2013 Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Nonvolatile memory  resistance switching  tungsten silicon oxide (WSiOx)  MEMORY  RRAM   Characteristics of hafnium oxide resistance random access memory with different setting compliance current 期刊论文 应用物理学快报, 2013 Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 CO2 FLUID TREATMENT  HOPPING CONDUCTION  RRAM  IMPROVEMENT  MECHANISMS  DEVICES  ORIGIN   Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices 期刊论文 应用物理学快报, 2013 Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 CO2 FLUID TREATMENT  RRAM   Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices 期刊论文 ieee electron device letters, 2013 Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 conduction  graphene oxide  hopping  redox reaction  resistance random access memory (RRAM)  RRAM   Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment 期刊论文 ieee electron device letters, 2013 Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Hopping conduction  resistive random access memory (RRAM)  supercritical fluid  RERAM   The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory 期刊论文 应用物理学快报, 2013 Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 RRAM   Performance and characteristics of double layer porous silicon oxide resistance random access memory 期刊论文 应用物理学快报, 2013 Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 FILMS   Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors 期刊论文 应用物理学快报, 2013 Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/11 DEGRADATION  DIELECTRICS  MOSFETS  DEVICES  STRESS