Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by   Supercritical CO2 Fluid Treatment

doi:10.1109/LED.2013.2251995

CORC > 北京大学 > 软件与微电子学院

	Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
	Chang, Kuan-Chang ; Pan, Chih-Hung ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Zhang, Rui ; Lou, Jen-Chung ; Young, Tai-Fa ; Chen, Jung-Hui ; Shih, Chih-Cheng ; Chu, Tian-Jian ; Chen, Jian-Yu ; Su, Yu-Ting ; Jiang, Jhao-Ping ; Chen, Kai-Huang ; Huang, Hui-Chun ; Syu, Yong-En ; Gan, Der-Shin ; Sze, Simon M.
刊名	ieee electron device letters
	2013
关键词	Hopping conduction resistive random access memory (RRAM) supercritical fluid RERAM
DOI	10.1109/LED.2013.2251995
英文摘要	In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.; Engineering, Electrical & Electronic; SCI(E); EI; 15; ARTICLE; 5; 617-619; 34
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/223897]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Chang, Kuan-Chang,Pan, Chih-Hung,Chang, Ting-Chang,et al. Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment[J]. ieee electron device letters,2013.
APA	Chang, Kuan-Chang.,Pan, Chih-Hung.,Chang, Ting-Chang.,Tsai, Tsung-Ming.,Zhang, Rui.,...&Sze, Simon M..(2013).Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment.ieee electron device letters.
MLA	Chang, Kuan-Chang,et al."Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment".ieee electron device letters (2013).