Endurance Improvement Technology With Nitrogen Implanted in the   Interface of WSiOx Resistance Switching Device

doi:10.1109/LED.2013.2260125

CORC > 北京大学 > 软件与微电子学院

	Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
	Syu, Yong-En ; Zhang, Rui ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Chang, Kuan-Chang ; Lou, Jen-Chung ; Young, Tai-Fa ; Chen, Jung-Hui ; Chen, Min-Chen ; Yang, Ya-Liang ; Shih, Chih-Cheng ; Chu, Tian-Jian ; Chen, Jian-Yu ; Pan, Chih-Hung ; Su, Yu-Ting ; Huang, Hui-Chun ; Gan, Der-Shin ; Sze, Simon M.
刊名	ieee electron device letters
	2013
关键词	Nonvolatile memory resistance switching tungsten silicon oxide (WSiOx) MEMORY RRAM
DOI	10.1109/LED.2013.2260125
英文摘要	Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.; Engineering, Electrical & Electronic; SCI(E); EI; 10; ARTICLE; 7; 864-866; 34
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/222435]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Syu, Yong-En,Zhang, Rui,Chang, Ting-Chang,et al. Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device[J]. ieee electron device letters,2013.
APA	Syu, Yong-En.,Zhang, Rui.,Chang, Ting-Chang.,Tsai, Tsung-Ming.,Chang, Kuan-Chang.,...&Sze, Simon M..(2013).Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device.ieee electron device letters.
MLA	Syu, Yong-En,et al."Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device".ieee electron device letters (2013).