×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [7]
内容类型
期刊论文 [5]
会议论文 [2]
发表日期
2007 [1]
2006 [1]
2003 [1]
2002 [1]
2000 [1]
1999 [2]
更多...
学科主题
半导体物理 [3]
光电子学 [2]
半导体材料 [1]
微电子学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共7条,第1-7条
帮助
限定条件
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Zheng, ZS (Zheng Zhong-Shan)
;
Zhang, EX (Zhang En-Xia)
;
Liu, ZL (Liu Zhong-Li)
;
Zhang, ZX (Zhang Zheng-Xuan)
;
Li, N (Li Ning)
;
Li, GH (Li Guo-Hua)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
SIMOX
Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123
Zhao HQ (Zhao Hong-Quan)
;
Yu LJ (Yu Li-Juan)
;
Huang YZ (Huang Yong-Zhen)
;
Wang YT (Wang Yu-Tian)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
InP
Si
X-ray double crystalline diffraction
thermal strain
wafer bonding
OPTOELECTRONIC DEVICES
EPITAXIAL OVERGROWTHS
TEMPERATURE
INTERFACE
STRESSES
VCSELS
SURFACES
ENERGY
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
期刊论文
thin solid films, 2003, 卷号: 430, 期号: 1-2, 页码: 50-53
Zhang Q
;
Zhu M
;
Wang L
;
Liu E
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
catalyzer
hot-wire chemical vapor deposition
simulation
AMORPHOUS-SILICON
DEPOSITION
Numerical analysis of LEC growth of GaAs with an axial magnetic field
期刊论文
international journal of heat and mass transfer, 2002, 卷号: 45, 期号: 13, 页码: 2843-2851
Li MW
;
Hu WR
;
Chen NH
;
Zeng DL
;
Tang ZM
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
liquid encapsulant Czochralski (LEC)
growth of GaAs
magnetic field finite-element method
boron oxide
CRYSTAL-GROWTH
HEAT-TRANSFER
CONVECTION
FLOW
SIMULATION
MODEL
A model of dislocations at the interface of the bonded wafers
会议论文
conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000
作者:
Han WH
;
Wang LC
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
wafer bonding
heteroepitaxy
lattice mismatch
edge-like dislocations
thermal stress
60 degrees dislocation lines
GAAS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/08/12
strip detectors
silicon detectors
annealing
simulation
irradiation
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
N-EFF
©版权所有 ©2017 CSpace - Powered by
CSpace