A model of dislocations at the interface of the bonded wafers

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	A model of dislocations at the interface of the bonded wafers
	Han WH; Wang LC
	2000
会议名称	conference on optical interconnects for telecommunication and data communications
会议日期	nov 08-10, 2000
会议地点	beijing, peoples r china
关键词	wafer bonding heteroepitaxy lattice mismatch edge-like dislocations thermal stress 60 degrees dislocation lines GAAS
页码	116-119
通讯作者	han wh chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要	wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. this technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. a model of dislocations at the bonded interface is proposed in this paper. edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. but the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.
英文摘要	wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. this technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. a model of dislocations at the bonded interface is proposed in this paper. edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. but the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:52z (gmt). no. of bitstreams: 1 2890.pdf: 77830 bytes, checksum: 367fb9c652706f2a4806a3c884108d78 (md5) previous issue date: 2000; china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china opt & optoelectr manufacturers assoc.; chinese phys soc.; spie.
会议录	optical interconnects for telecommunication and data communications, 4225
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3896-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13723]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han WH,Wang LC. A model of dislocations at the interface of the bonded wafers[C]. 见:conference on optical interconnects for telecommunication and data communications. beijing, peoples r china. nov 08-10, 2000.