Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
Zhang Q ; Zhu M ; Wang L ; Liu E
刊名thin solid films
2003
卷号430期号:1-2页码:50-53
关键词catalyzer hot-wire chemical vapor deposition simulation AMORPHOUS-SILICON DEPOSITION
ISSN号0040-6090
通讯作者zhu m,chinese acad sci,dept phys,grad sch,pob 3908,beijing 100039,peoples r china.
中文摘要based on stefan-boltzman and lambert theorems, the radiation energy distribution on substrate (reds) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. the reds uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. as d(f-s) > 4 cm, the reds uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. two-dimensional calculation shows that the reds uniformity is limited by temperature decay at filament edges. the simulation data are in good agreement with experiments. (c) 2003 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11540]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Zhang Q,Zhu M,Wang L,et al. Influence of heated catalyzer on thermal distribution of substrate in HWCVD system[J]. thin solid films,2003,430(1-2):50-53.
APA Zhang Q,Zhu M,Wang L,&Liu E.(2003).Influence of heated catalyzer on thermal distribution of substrate in HWCVD system.thin solid films,430(1-2),50-53.
MLA Zhang Q,et al."Influence of heated catalyzer on thermal distribution of substrate in HWCVD system".thin solid films 430.1-2(2003):50-53.
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