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科研机构
半导体研究所 [43]
内容类型
期刊论文 [39]
会议论文 [4]
发表日期
2011 [2]
2010 [1]
2009 [4]
2008 [3]
2007 [2]
2006 [7]
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学科主题
半导体物理 [11]
半导体材料 [10]
光电子学 [7]
人工智能 [1]
半导体器件 [1]
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The transport mechanism of gate leakage current in algan/gan high electron mobility transistors
期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 5
作者:
Lin, D. F.
;
Wang, X. L.
;
Xiao, H. L.
;
Wang, C. M.
;
Jiang, L. J.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
DFT Feature Analysis of Corn Varieties Based on Near Infrared Spectra
期刊论文
spectroscopy and spectral analysis, 2011, 卷号: 31, 期号: 1, 页码: 119-122
Li YP
;
Li WJ
;
Lai JL
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  |  
浏览/下载:52/1
  |  
提交时间:2011/07/06
Near infrared spectra (NIRS)
Corn seed
Discrete fourier Transform (DFT)
Difference degree
Character analyse
SPECTROSCOPY
CALIBRATION
MODEL
Mode characteristics of metallically coated square microcavity connected with an output waveguide
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 11, 页码: art. no. 113103
Che KJ (Che Kai-Jun)
;
Huang YZ (Huang Yong-Zhen)
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  |  
浏览/下载:51/0
  |  
提交时间:2010/07/05
finite difference time-domain analysis
microcavities
micro-optics
optical waveguides
Q-factor
reflectivity
refractive index
RESONATOR MICROLASERS
FDTD TECHNIQUE
EMISSION
FILTERS
CAVITY
LAYER
LASER
Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer
期刊论文
Materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao, Jie
;
Hu, Lizhong
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  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Zno
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
Enhancement of field emission of the zno film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: 3
作者:
You, J. B.
;
Zhang, X. W.
;
Cai, P. F.
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Atomic force microscopy
Field emission
Hydrogen
Ii-vi semiconductors
Plasma materials processing
Sputter deposition
Wide band gap semiconductors
Work function
Zinc compounds
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:102/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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  |  
浏览/下载:47/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers
期刊论文
Ieee journal of quantum electronics, 2008, 卷号: 44, 期号: 5-6, 页码: 448-455
作者:
Xiao, Jin-Long
;
Huang, Yong-Zhen
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  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Gain
Noise
Quantum dots (qds)
Semiconductor-optical amplifiers (soas)
Catalytic synthesis and luminescent characteristics of gan nanorods
期刊论文
Acta physico-chimica sinica, 2008, 卷号: 24, 期号: 2, 页码: 355-358
作者:
Chen Jin-Hua
;
Xue Cheng-Shan
;
Zhuang Hui-Zhao
;
Li Hong
;
Qin Li-Xia
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
Gan
Nanorods
Single crystal
Luminescence
Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers
期刊论文
ieee journal of quantum electronics, 2008, 卷号: 44, 期号: 39939, 页码: 448-455
Xiao, JL
;
Huang, YZ
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  |  
浏览/下载:38/1
  |  
提交时间:2010/03/08
gain
noise
quantum dots (QDs)
semiconductor-optical amplifiers (SOAs)
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