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	Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers
	Xiao, Jin-Long; Huang, Yong-Zhen
刊名	Ieee journal of quantum electronics
	2008-05-01
卷号	44期号:5-6页码:448-455
关键词	Gain Noise Quantum dots (qds) Semiconductor-optical amplifiers (soas)
ISSN号	0018-9197
DOI	10.1109/jqe.2007.916683
通讯作者	Xiao, jin-long(jlxiao@semi.ac.cn)
英文摘要	The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (qd-soas). the carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. the longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. the saturation output power 19.7 dbm and device gain 20.6 db are obtained for a qd-soa with the cavity length of 6 rum at the bias current of 500 ma. the influences of them electron intradot relaxation time and the qd capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. the noise figure as low as 3.5 db is expected due to the strong polarization sensitive spontaneous emission. the characteristics of gain saturation and noise figure versus input signal power for qd-soas are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.
WOS关键词	LINEWIDTH ENHANCEMENT FACTOR ; INTRABAND RELAXATION ; EXCITED-STATES ; OUTPUT POWER ; MU-M ; DYNAMICS ; LASERS ; MODEL ; SIMULATION ; EMISSION
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000256701500006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427360
专题	半导体研究所
通讯作者	Xiao, Jin-Long
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xiao, Jin-Long,Huang, Yong-Zhen. Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers[J]. Ieee journal of quantum electronics,2008,44(5-6):448-455.
APA	Xiao, Jin-Long,&Huang, Yong-Zhen.(2008).Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers.Ieee journal of quantum electronics,44(5-6),448-455.
MLA	Xiao, Jin-Long,et al."Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers".Ieee journal of quantum electronics 44.5-6(2008):448-455.

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