×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [11]
内容类型
期刊论文 [11]
发表日期
2011 [3]
2009 [2]
2008 [2]
2006 [1]
2003 [2]
1999 [1]
更多...
学科主题
半导体材料 [4]
半导体物理 [4]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
限定条件
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in vo2 film near the metal-insulator transition region
期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 24, 页码: 3
作者:
Li, W. W.
;
Yu, Q.
;
Liang, J. R.
;
Jiang, K.
;
Hu, Z. G.
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/05/12
External electric field manipulations on structural phase transition of vanadium dioxide nanoparticles and its application in field effect transistor
期刊论文
Journal of physical chemistry c, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
作者:
Li, W. W.
;
Zhu, J. J.
;
Liang, J. R.
;
Hu, Z. G.
;
Liu, J.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material
期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 4
作者:
Ma Zhi-Hua
;
Cao Quan
;
Zuo Yu-Hua
;
Zheng Jun
;
Xue Chun-Lai
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2019/05/12
Infrared response
Ion implantation
Rapid thermal annealing
Intermediate band solar cell
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901
作者:
Wei HY
;
Song HP
;
Jiao CM
收藏
  |  
浏览/下载:380/108
  |  
提交时间:2010/03/08
aluminium compounds
core levels
III-V semiconductors
magnesium compounds
semiconductor heterojunctions
semiconductor-insulator boundaries
X-ray photoelectron spectra
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:311/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107
Wang, BR
;
Sun, BQ
;
Ji, Y
;
Dou, XM
;
Xu, ZY
;
Wang, ZM
;
Salamo, GJ
收藏
  |  
浏览/下载:104/2
  |  
提交时间:2010/03/08
LOCALIZED STATES
ISLANDS
WIRES
SUPERLATTICES
ORGANIZATION
GAAS(100)
EXCITONS
GROWTH
DECAY
GAAS
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:233/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705
Chi F
;
Li SS
收藏
  |  
浏览/下载:94/0
  |  
提交时间:2010/04/11
AHARONOV-BOHM INTERFEROMETER
SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON MODEL
MAGNETIC-FLUX
KONDO REGIME
TRANSPORT
EQUILIBRIUM
DEVICES
Magnetic properties and rectifying behaviour of silicon doped with gadolinium
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
magnetic semiconductor
magnetic p-n junction
ion beam epitaxy
gadolinium silicides
METAL-INSULATOR-TRANSITION
P-N-JUNCTION
INDUCED FERROMAGNETISM
SI/SIER INTERFACE
BEAM EPITAXY
SEMICONDUCTORS
EXCITATION
MAGNETORESISTANCE
ALLOYS
Magnetic properties of silicon doped with gadolinium
期刊论文
applied physics a-materials science & processing, 2003, 卷号: 77, 期号: 3-4, 页码: 599-602
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:321/10
  |  
提交时间:2010/08/12
METAL-INSULATOR-TRANSITION
BEAM EPITAXY TECHNIQUE
SEMICONDUCTING SILICIDES
INDUCED FERROMAGNETISM
FILMS
MAGNETORESISTANCE
TEMPERATURE
ALLOYS
©版权所有 ©2017 CSpace - Powered by
CSpace