External electric field manipulations on structural phase transition of vanadium dioxide nanoparticles and its application in field effect transistor | |
Li, W. W.1; Zhu, J. J.1; Liang, J. R.2,4; Hu, Z. G.1; Liu, J.1,3; Chen, H. D.2; Chu, J. H.1 | |
刊名 | Journal of physical chemistry c |
2011-12-01 | |
卷号 | 115期号:47页码:23558-23563 |
ISSN号 | 1932-7447 |
DOI | 10.1021/jp207196g |
通讯作者 | Hu, z. g.(zghu@ee.ecnu.edu.cn) |
英文摘要 | Despite the intensive study on the famous metal insulator transition, many questions regarding the evolution of the structural phase transition (spt) in vanadium dioxide (vo(2)) remain unresolved. here, the lattice vibrations and spt of vo(2) nanoparticles on a sio(2)/si(100) substrate with different applied voltage from 0 to 8 v have been investigated by raman scattering spectra. it can be found that both the intensities of the a(g) and b(g) phonon modes decrease with increasing temperature. moreover, the vibration modes disappear when heating up to the temperature of spt (t(spt)). with the voltage increasing from 0 to 8 v, the t(spt) decreases from 68.3 to 64.3 degrees c for the heating process and from 66.3 to 58.8 degrees c for the cooling process, respectively. the fitting results reveal that the t(spt) was decreased by -0.48 and -0.87 degrees c/v in the heating and cooling processes, respectively. this is because the larger electric field could assist the shortening of the v-v distance and the change of carriers between electrons and the mixing of electrons and holes. moreover, the t(spt) delay was increased by 0.4 degrees c/v with increasing the positive voltage because the electric field can pull the electrons and push the holes. the present results of the vo(2) three-terminal device show a potential realization of the vo(2)-based field effect transistor. |
WOS关键词 | METAL-INSULATOR-TRANSITION ; CRYSTALLINE VO2 NANOBEAMS ; THIN-FILMS ; OPTICAL-PROPERTIES ; MOTT TRANSITION ; NANOSTRUCTURES ; ORGANIZATION ; DOMAINS ; DEVICES |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000297195200037 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428357 |
专题 | 半导体研究所 |
通讯作者 | Hu, Z. G. |
作者单位 | 1.E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 4.Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China |
推荐引用方式 GB/T 7714 | Li, W. W.,Zhu, J. J.,Liang, J. R.,et al. External electric field manipulations on structural phase transition of vanadium dioxide nanoparticles and its application in field effect transistor[J]. Journal of physical chemistry c,2011,115(47):23558-23563. |
APA | Li, W. W..,Zhu, J. J..,Liang, J. R..,Hu, Z. G..,Liu, J..,...&Chu, J. H..(2011).External electric field manipulations on structural phase transition of vanadium dioxide nanoparticles and its application in field effect transistor.Journal of physical chemistry c,115(47),23558-23563. |
MLA | Li, W. W.,et al."External electric field manipulations on structural phase transition of vanadium dioxide nanoparticles and its application in field effect transistor".Journal of physical chemistry c 115.47(2011):23558-23563. |
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