Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)

	Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
	Wei HY; Song HP; Jiao CM
刊名	applied physics letters
	2009
卷号	94 期号:12 页码:art. no. 129901
关键词	aluminium compounds core levels III-V semiconductors magnesium compounds semiconductor heterojunctions semiconductor-insulator boundaries X-ray photoelectron spectra
ISSN号	0003-6951
通讯作者	yang al chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: alyang@semi.ac.cn ; xlliu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7279]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei HY,Song HP,Jiao CM. Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)[J]. applied physics letters,2009,94(12):art. no. 129901.
APA	Wei HY,Song HP,&Jiao CM.(2009).Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009).applied physics letters,94(12),art. no. 129901.
MLA	Wei HY,et al."Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)".applied physics letters 94.12(2009):art. no. 129901.