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科研机构
半导体研究所 [16]
内容类型
期刊论文 [15]
会议论文 [1]
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2010 [1]
2008 [2]
2006 [3]
2005 [2]
2004 [2]
2003 [1]
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光电子学 [4]
半导体材料 [3]
半导体物理 [3]
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Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:
Li JB
收藏
  |  
浏览/下载:64/1
  |  
提交时间:2010/04/22
Twinning
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Evolution of ge and sige quantum dots under excimer laser annealing
期刊论文
Chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 242-245
作者:
Han Gen-Quan
;
Zeng Yu-Gang
;
Yu Jin-Zhong
;
Cheng Bu-Wen
;
Yang Hai-Tao
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Evolution of Ge and SiGe quantum dots under excimer laser annealing
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 242-245
Han GQ
;
Zeng YG
;
Yu JZ
;
Cheng BW
;
Yang HT
收藏
  |  
浏览/下载:86/2
  |  
提交时间:2010/03/08
Defect influence on luminescence efficiency of gan-based leds
期刊论文
Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374
作者:
Li, Shuping
;
Fang, Zhilai
;
Chen, Hangyang
;
Li, Jinchai
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Defects
Gan
Luminescence efficiency
Led
Defect influence on luminescence efficiency of GaN-based LEDs
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374
Li SP (Li Shuping)
;
Fang ZL (Fang Zhilai)
;
Chen HY (Chen Hangyang)
;
Li JC (Li Jinchai)
;
Chen XH (Chen Xiaohong)
;
Yuan XL (Yuan Xiaoli)
;
Sekiguchi T (Sekiguchi Takashi)
;
Wang QM (Wang Qiming)
;
Kang JY (Kang Junyong)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/04/11
defects
GaN
luminescence efficiency
LED
Defect influence on luminescence efficiency of GaN-based LEDs
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li SP (Li Shuping)
;
Fang ZL (Fang Zhilai)
;
Chen HY (Chen Hangyang)
;
Li JC (Li Jinchai)
;
Chen XH (Chen Xiaohong)
;
Yuan XL (Yuan Xiaoli)
;
Sekiguchi T (Sekiguchi Takashi)
;
Wang QM (Wang Qiming)
;
Kang JY (Kang Junyong)
收藏
  |  
浏览/下载:475/18
  |  
提交时间:2010/03/29
defects
Depth dependent elastic strain in zno epilayer: combined rutherford backscattering/channeling and x-ray diffraction
期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2005, 卷号: 229, 期号: 2, 页码: 246-252
作者:
Feng, ZX
;
Yao, SD
;
Hou, L
;
Jin, RQ
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Rutherford backscattering/channeling
Elastic strain
Tetragonal distortion
Lattice mismatich
Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction
期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2005, 卷号: 229, 期号: 2, 页码: 246-252
Feng ZX
;
Yao SD
;
Hou L
;
Jin RQ
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/17
rutherford backscattering/channeling
Depth distribution of the strain in the gan layer with low-temperature aln interlayer on si(111) substrate studied by rutherford backscattering/channeling
期刊论文
Applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
作者:
Lu, Y
;
Cong, GW
;
Liu, XL
;
Lu, DC
;
Wang, ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Lu, Y
;
Cong, GW
;
Liu, XL
;
Lu, DC
;
Wang, ZG
;
Wu, MF
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/03/17
STRESS
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