Defect influence on luminescence efficiency of GaN-based LEDs

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Defect influence on luminescence efficiency of GaN-based LEDs
	Li SP (Li Shuping) ; Fang ZL (Fang Zhilai) ; Chen HY (Chen Hangyang) ; Li JC (Li Jinchai) ; Chen XH (Chen Xiaohong) ; Yuan XL (Yuan Xiaoli) ; Sekiguchi T (Sekiguchi Takashi) ; Wang QM (Wang Qiming) ; Kang JY (Kang Junyong)
	2006
会议名称	11th conference on defects recognition imaging and physics in semiconductors
会议日期	sep 13-19, 2005
会议地点	beijing, peoples r china
关键词	defects
页码	9 (1-3): 371-374
通讯作者	kang, jy, xiamen univ, dept phys, xiamen 361005, peoples r china. 电子邮箱地址: jykang@xmu.edu.cn
中文摘要	wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved.
英文摘要	wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; xiamen univ, dept phys, xiamen 361005, peoples r china; xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; natl inst mat sci, tsukuba, ibaraki, japan; chinese acad sci, inst semicond, beijing 100864, peoples r china
收录类别	CPCI（ISTP）
会议录	materials science in semiconductor processing
会议录出版者	elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
会议录出版地	the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
学科主题	光电子学
语种	英语
ISSN号	1369-8001
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10004]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005.