CORC

在结果中检索

CORC

浏览/检索结果: 共46条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:  Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao
收藏  |  浏览/下载：120/0  |  提交时间：2019/05/12
The explanation of inn bandgap discrepancy based on experiments and first-principle calculations 期刊论文
Physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Liu, Chaoren;  Li, Jingbo
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy 期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 393-395
Wang, S.L.; Meng, K.K.; Chen, L.; Xu, P.F.; Meng, H.J.; Lu, J.; Zhao, J.H.
收藏  |  浏览/下载：68/0  |  提交时间：2012/06/14
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 100301
Wang, LG; Shen, C; Zheng, HZ; Zhu, H; Zhao, JH
收藏  |  浏览/下载：19/0  |  提交时间：2012/01/06
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:  Wang LG;  Chen L;  Zhu H
收藏  |  浏览/下载：43/5  |  提交时间：2011/07/05
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun; Song, Guofeng
收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14
Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110
Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M.
收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14

©版权所有 ©2017 CSpace - Powered by CSpace