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半导体研究所 [83]

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	A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文 Vacuum, 2022, 卷号: 201 作者: Wang, Xiaoye; Bai, Xue; Yang, Xiaoguang; Du, Wenna; Yang, Tao 收藏 \| 浏览/下载：17/0 \| 提交时间：2022/06/20 Crystal defects Gallium alloys III-V semiconductors Indium alloys Metallorganic chemical vapor deposition Morphology Nanowires Semiconducting indium gallium arsenide Semiconductor alloys Silicon Substrates Growth morphology High-temperature annealing Inas nanowire Metal-organic chemical vapour depositions Optimisations Parasitic island Parasitics Si substrates Substrate surface Treatment methods
	Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property 期刊论文 ACTA PHYSICO-CHIMICA SINICA, 2022, 卷号: 38, 期号: 5, 页码: 8 作者: Zou, Jingyun; Gao, Bing; Zhang, Xiaopin; Tang, Lei; Feng, Simin 收藏 \| 浏览/下载：72/0 \| 提交时间：2022/01/27 Single-walled carbon nanotube Molybdenum disulfide Dimension Heterostructure Charge transfer
	Pcm-concrete interfacial tensile behavior using nano-sio2 based on splitting-tensile test 期刊论文 Journal of Advanced Concrete Technology, 2021, 卷号: 19, 期号: 4, 页码: 321-334 作者: Li, Kan; Wei, Zhiqiang; Qiao, Hongxia; Lu, Chenggong; Theogene, Hakuzweyezu 收藏 \| 浏览/下载：2/0 \| 提交时间：2022/02/17 Bond strength (materials) Composite structures Compressive strength Concrete mixing Concrete testing Hydrated lime Interface states Mortar Nanocomposite films Polymer films Semiconducting films Silica Silicon Surface roughness Tensile testing Composite specimens Interface roughness Interfacial bond strength Interfacial performance Interfacial strength Polymer cement mortars Splitting tensile tests Tensile behaviors
	Chemical vapor deposition of layered two-dimensional MoSi2N4 materials 期刊论文 SCIENCE, 2020, 卷号: 369, 期号: 6504, 页码: 670-+ 作者: Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei 收藏 \| 浏览/下载：10/0 \| 提交时间：2021/02/02
	Chemical vapor deposition of layered two-dimensional MoSi2N4 materials 期刊论文 SCIENCE, 2020, 卷号: 369, 期号: 6504, 页码: 670-+ 作者: Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei 收藏 \| 浏览/下载：116/0 \| 提交时间：2021/02/02
	Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6 作者: Chen QS(陈启生); Zhu P(朱鹏); He M(何蒙) 收藏 \| 浏览/下载：55/0 \| 提交时间：2020/03/11 Computer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds
	Decreasing Resistivity of Silicon Carbide Ceramics by Incorporation of Graphene 期刊论文 MATERIALS, 2020, 卷号: 13, 期号: 16 作者: Cai, Ningning; Guo, Daidong; Wu, Guoping; Xie, Fangmin; Tan, Shouhong 收藏 \| 浏览/下载：71/0 \| 提交时间：2020/12/16 ELECTRICAL-RESISTIVITY MECHANICAL-PROPERTIES SIC CERAMICS COMPOSITE INFILTRATION PERCOLATION CONDUCTION
	All-Silicon Topological Semimetals with Closed Nodal Line 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 卷号: 10, 页码: 244-250 作者: Liu, Zhifeng; Xin, Hongli; Fu, Li; Liu, Yingqiao; Song, Tielei 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/02 Calculations Electronic properties Quantum theory Semiconductor device manufacture Semiconductor devices Topology Zeolites, First-principles calculation Nontrivial topology Semiconductor industry Si-based devices Spin-orbit couplings Structural and electronic properties Symmetry-breaking Time reversal symmetries, Semiconducting silicon
	Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers 期刊论文 Journal of Crystal Growth, 2019, 卷号: Vol.507, 页码: 143-145 作者: Yingxi Niu; Xiaoyan Tang; Pengfei Wu; Lingyi Kong; Yun Li 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/12/13 A1 Surfaces A3 Chemical vapor deposition processes B2 Semiconducting materials B2 Semiconducting silicon compounds
	Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors 期刊论文 RSC ADVANCES, 2019, 卷号: 9, 期号: 19, 页码: 10578 作者: Lv, Zhengxia; Liu, Dan; Yu, Xiaoqin; Lv, Qianjin; Gao, Bing 收藏 \| 浏览/下载：34/0 \| 提交时间：2019/12/26

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