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	Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers
	Yingxi Niu; Xiaoyan Tang; Pengfei Wu; Lingyi Kong; Yun Li; Jinghua Xia; Honglin Tian; Liang Tian; Lixin Tian; Wenting Zhang
刊名	Journal of Crystal Growth
	2019
卷号	Vol.507页码:143-145
关键词	A1 Surfaces A3 Chemical vapor deposition processes B2 Semiconducting materials B2 Semiconducting silicon compounds
ISSN号	0022-0248
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4603249
专题	湖南大学
作者单位	1.d Dongguan Tianyu Semiconductor Technology Co., Ltd., Dongguan 523808, China 2.State Key Lab of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102209, China 3.National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China a School of Microelectronics, Xidian University, Xi’an 710071, China
推荐引用方式 GB/T 7714	Yingxi Niu,Xiaoyan Tang,Pengfei Wu,et al. Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers[J]. Journal of Crystal Growth,2019,Vol.507:143-145.
APA	Yingxi Niu.,Xiaoyan Tang.,Pengfei Wu.,Lingyi Kong.,Yun Li.,...&Yuming Zhang.(2019).Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers.Journal of Crystal Growth,Vol.507,143-145.
MLA	Yingxi Niu,et al."Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers".Journal of Crystal Growth Vol.507(2019):143-145.

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