Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point

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	Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
	Wang, LG ; Shen, C ; Zheng, HZ ; Zhu, H ; Zhao, JH
刊名	chinese physics b
	2011
卷号	20 期号:10 页码:100301
关键词	charged acceptor centre screening effect exchange interaction SHALLOW ACCEPTOR STATES GALLIUM-ARSENIDE SEMICONDUCTORS FIELD
ISSN号	1674-1056
通讯作者	zheng, hz (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china，hzzheng@red.semi.ac.cn
学科主题	半导体物理
收录类别	SCI
资助信息	national basic research program of china[2007cb924904, 2011cb932901]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22709]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang, LG,Shen, C,Zheng, HZ,et al. Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point[J]. chinese physics b,2011,20(10):100301.
APA	Wang, LG,Shen, C,Zheng, HZ,Zhu, H,&Zhao, JH.(2011).Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point.chinese physics b,20(10),100301.
MLA	Wang, LG,et al."Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point".chinese physics b 20.10(2011):100301.