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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer-based resistive RAM 期刊论文 ELECTRONICS LETTERS, 2016 Ma, Wenjia; Zhou, Zheng; Zhu, Dongbin; Liu, Lifeng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 DESIGN   A Novel PUF based on Cell Error Rate Distribution of STT-RAM 其他 2016-01-01 Zhang, Xian; Sun, Guangyu; Zhang, Yaojun; Chen, Yiran; Li, Hai; Wen, Wujie; Di, Jia 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 MEMORY   Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System 其他 2016-01-01 Zhang, Yue; Zhang, Chao; Nan, Jiang; Zhang, Zhizhong; Zhang, Xueying; Klein, Jacques-Olivier; Ravelosona, Dafine; Sun, Guangyu; Zhao, Weisheng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 Chiral domain wall motion  L2 cache  magnetic field assistance  racetrack memory  DOMAIN-WALL MOTION  ELECTRIC-FIELD CONTROL  FERROMAGNETIC NANOWIRES  TORQUE   Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System 期刊论文 IEEE International Symposium on Circuits and Systems (ISCAS), 2016 Zhang, Yue; Zhang, Chao; Nan, Jiang; Zhang, Zhizhong; Zhang, Xueying; Klein, Jacques-Olivier; Ravelosona, Dafine; Sun, Guangyu; Zhao, Weisheng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 Chiral domain wall motion  L2 cache  magnetic field assistance  racetrack memory  DOMAIN-WALL MOTION  ELECTRIC-FIELD CONTROL  FERROMAGNETIC NANOWIRES  TORQUE   Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: From Device to System 其他 2015-01-01 Zhang, Yue; Zhang, Chao; Klein, Jacques-Olivier; Ravelosona, Dafine; Sun, Guangyu; Zhao, Weisheng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Racetrack memory  Magnetic field assistance  Chiral domain wall motion  L2 cache  TORQUE   Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy 期刊论文 scientific reports, 2014 Liu, T.; Zhang, Y.; Cai, J. W.; Pan, H. Y. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 RANDOM-ACCESS MEMORY  TUNNEL-JUNCTION  FILMS  MAGNETORESISTANCE  DEVICE   Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation 其他 2012-01-01 Wang, X.P.; Fang, Z.; Li, X.; Chen, B.; Gao, B.; Kang, J.F.; Chen, Z.X.; Kamath, A.; Shen, N.S.; Singh, N.; Lo, G.Q.; Kwong, D.L. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/17 A TaOx based threshold switching selector for the RRAM crossbar array memory 其他 2012-01-01 Huang, Yinglong; Huang, Ru; Cai, Yimao; Wu, Huiwei; Yue, Pan; Zhang, Yaokai; Chen, Cheng; Wang, Yangyuan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13