Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx   multilayer-based resistive RAM

doi:10.1049/el.2015.4198

CORC > 北京大学 > 信息科学技术学院

	Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer-based resistive RAM
	Ma, Wenjia ; Zhou, Zheng ; Zhu, Dongbin ; Liu, Lifeng
刊名	ELECTRONICS LETTERS
	2016
关键词	DESIGN
DOI	10.1049/el.2015.4198
英文摘要	A multilayer (ML)-based resistive RAM (RRAM) is proposed to achieve the performance of logic and memory application. Multilevel resistive switching characteristic of ML-based RRAM is demonstrated in aspect of data storage application. An innovative method is proposed to simultaneously achieve quaternary addition and data storage application, resistance serves as physical state variable instead of voltage or charge in the computing system. An instance of quaternary nonvolatile addition is demonstrated in an experiment, which shows the ML-based RRAM is promising for non-volatile computational application as well as higher integration capability. current, A current, A probability; National Science and Technology Major Project of China [2011ZX02728]; National Natural Science Foundation of China [61376084, 60925015]; SCI(E); EI; ARTICLE; lfliu@pku.edu.cn; 12; 1073-+; 52
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437138]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ma, Wenjia,Zhou, Zheng,Zhu, Dongbin,et al. Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer-based resistive RAM[J]. ELECTRONICS LETTERS,2016.
APA	Ma, Wenjia,Zhou, Zheng,Zhu, Dongbin,&Liu, Lifeng.(2016).Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer-based resistive RAM.ELECTRONICS LETTERS.
MLA	Ma, Wenjia,et al."Quaternary non-volatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer-based resistive RAM".ELECTRONICS LETTERS (2016).