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Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chang, Pengying; Liu, Xiaoyan; Di, Shaoyan; Du, Gang
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Simulation of Nano-Scale Double Gate In0.53Ga0.47As nMOSFETs by a Deterministic BTE Solver 其他
2016-01-01
Di, Shaoyan; Zhao, Kai; Lun, Zhiyuan; Lu, Tiao; Du, Gang; Liu, Xiaoyan
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver 其他
2016-01-01
Di, Shaoyan; Zhao, Kai; Lu, Zhiyuan Lun Tiao; Du, Gang; Liu, Xiaoyan
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Gate Engineering in SOI LDMOS for Device Reliability 其他
2016-01-01
Aanand; Sheu, Gene; Imam, Syed Sarwar; Lu, Shao Wei; Aryadeep, Chirag; Yang, Shao Ming
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
A device adaptive inflow boundary condition for Wigner equations of quantum transport 其他
2014-01-01
Jiang, Haiyan; Lu, Tiao; Cai, Wei
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11
A closed-form capacitance model for tunnel FETs with explicit surface potential solutions 期刊论文
应用物理杂志, 2014
Wang, Jiaxin; Wu, Chunlei; Huang, Qianqian; Wang, Chao; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs 期刊论文
semiconductor science and technology, 2013
Tan, Fei; An, Xia; Xue, Shoubin; Huang, Liangxi; Wu, Weikang; Zhang, Xing; Huang, Ru
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs 期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin; Xu, Yiwen; Chen, Lin; Zhang, Lining; Zhou, Xingye; Ma, Chenyue; Cao, Yu; Ye, Yun; Wang, Cheng; Liang, Hailang; Chan, Mansun
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel 期刊论文
chinese physics b, 2012
Zhang Jian; He Jin; Zhou Xing-Ye; Zhang Li-Ning; Ma Yu-Tao; Chen Qin; Zhang Xu-Kai; Yang Zhang; Wang Rui-Fei; Han Yu; Chan Mansun
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel 期刊论文
Chinese Physics B, 2012
张健; 何进; 周幸叶; 张立宁; 马玉涛; 陈沁; 张勖凯; 杨张; 王睿斐; 韩雨; 陈文新
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03

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