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	Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver
	Di, Shaoyan ; Zhao, Kai ; Lu, Zhiyuan Lun Tiao ; Du, Gang ; Liu, Xiaoyan
	2016
英文摘要	A nano-scale double gate In0.53Ga0.47As nMOSFET device structure is simulated by deterministically solving the time dependent Boltzmann Transport Equation (BTE). The results show that the contribution of the L valleys cannot be ignored even if the energy gap between r and L valleys are very large. Moreover, the quasi-ballistic transport is observed despite the existence of scattering. ? 2016 IEEE.; EI
语种	英语
出处	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
DOI标识	10.1109/VLSI-TSA.2016.7480516
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449473]
专题	信息科学技术学院 工学院
推荐引用方式 GB/T 7714	Di, Shaoyan,Zhao, Kai,Lu, Zhiyuan Lun Tiao,et al. Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver. 2016-01-01.

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