×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [12]
兰州理工大学 [1]
西安交通大学 [1]
化学研究所 [1]
光电技术研究所 [1]
内容类型
期刊论文 [16]
发表日期
2020 [1]
2018 [2]
2016 [1]
2015 [1]
2013 [3]
2011 [3]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共16条,第1-10条
帮助
限定条件
内容类型:期刊论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Plasmonic lithography for the fabrication of surface nanostructures with a feature size down to 9 nm
期刊论文
Nanoscale, 2020, 卷号: 12, 期号: 4, 页码: 2415-2421
作者:
Gao, Ping
;
Pu, Mingbo
;
Ma, Xiaoliang
;
Li, Xiong
;
Guo, Yinghui
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/05/11
Molecular Glass Photoresists with High Resolution, Low LER, and High Sensitivity for EUV Lithography
期刊论文
MACROMOLECULAR MATERIALS AND ENGINEERING, 2018, 卷号: 303, 期号: 6
作者:
Peng, Xiaoman
;
Wang, Yafei
;
Xu, Jian
;
Yuan, Hua
;
Wang, Liangqian
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/04/09
Euv
Lithography
Molecular Glasses
Photoresists
Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 1873-1879
作者:
Wan, Wenbo
;
Lou, Haijun
;
Xiao, Ying
;
Lin, Xinnan
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/11/15
Charge-plasma
charge-plasma junctionless transistor (CP-JLT)
line edge roughness (LER)
variation
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Jiang, Xiaobo
;
Guo, Shaofeng
;
Wang, Runsheng
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/04
FinFET
random variation
characterization
line-edge roughness (LER)
metal gate granularity (MGG)
LINE-EDGE ROUGHNESS
VARIABILITY
LWR
LER
Line-edge roughness induced single event transient variation in SOI FinFETs
期刊论文
半导体学报(英文版), 2015
Wu Weikang
;
An Xia
;
Jiang Xiaobo
;
Chen Yehua
;
Liu Jingjing
;
Zhang Xing
;
Huang Ru
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/03
heavy ion irradiation single event transient variation line-edge roughness SOI FinFET
heavy ion irradiation
single event transient
variation
line-edge roughness
SOI
FinFET
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method
期刊论文
ieee电子器件汇刊, 2013
Jiang, Xiaobo
;
Wang, Runsheng
;
Yu, Tao
;
Chen, Jiang
;
Huang, Ru
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2015/11/10
Auto-correlation function
cross-correlation
line-edge-roughness (LER)
line-width-roughness (LWR)
modeling
variability
INTRINSIC PARAMETER FLUCTUATIONS
VARIABILITY
MOSFETS
DECANANOMETER
PERFORMANCE
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability
期刊论文
ieee电子器件汇刊, 2013
Wang, Runsheng
;
Jiang, Xiaobo
;
Yu, Tao
;
Fan, Jiewen
;
Chen, Jiang
;
Pan, David Z.
;
Huang, Ru
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/10
FinFET
line-edge roughness (LER)
line-width roughness (LWR)
nanowire
variability
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
MOSFETS
DECANANOMETER
NANOWIRES
OXIDATION
NOISE
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX
期刊论文
ieee电子器件汇刊, 2013
Yang, Yunxiang
;
Markov, Stanislav
;
Cheng, Binjie
;
Zain, Anis Suhaila Mohd
;
Liu, Xiaoyan
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Back-gate bias
line edge roughness (LER)
metal gate granularity (MGG)
random dopant fluctuation (RDF)
statistical variability (SV)
thin buried oxide (BOX)
INTRINSIC PARAMETER FLUCTUATIONS
SIMULATION
DECANANOMETER
IMPACT
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
期刊论文
ieee电子器件汇刊, 2011
Wang, Runsheng
;
Jing Zhuge
;
Huang, Ru
;
Yu, Tao
;
Zou, Jibin
;
Kim, Dong-Won
;
Park, Donggun
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Line-edge roughness (LER)
metal-gate work function variation (WFV)
modeling
random dopant fluctuation (RDF)
Si nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) (SNWT)
variability
INTRINSIC PARAMETER FLUCTUATIONS
THRESHOLD VOLTAGE FLUCTUATION
CARRIER TRANSPORT
PERFORMANCE
IMPACT
TRANSISTORS
CMOS
DECANANOMETER
INTEGRATION
MOBILITY
Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs
期刊论文
ieee 纳米技术汇刊, 2011
Yang, Yunxiang
;
Yu, Shimeng
;
Zeng, Lang
;
Du, Gang
;
Kang, Jinfeng
;
Zhao, Yuning
;
Han, Ruqi
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Dopant-segregated Schottky MOSFETs (DSS-MOSFETs)
line edge roughness (LER)
Schottky barrier (SB)
technology computer-aided design (TCAD) simulation
variations
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
BARRIER
DECANANOMETER
IMPACT
©版权所有 ©2017 CSpace - Powered by
CSpace