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CORC

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A broadband microwave GaN HEMTs class EF3 power amplifier with pi-type network 期刊论文
IEICE ELECTRONICS EXPRESS, 2017
Rong, Chuicai; Liu, Xiansuo; Xu, Yuehang; Xia, Mingyao; Xu, Ruimin; Zhang, Tiedi
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? 期刊论文
PLOS ONE, 2015
Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
GAN  TRANSPORT  DEFECT  LAYERS  HFETS  
Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure 期刊论文
ELECTRONICS LETTERS, 2015
Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
GAN  SURFACE  HEMTS  
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
A novel method for measuring parasitic resistance in high electron mobility transistors 期刊论文
固体电子学, 2014
Yang, Zhen; Wang, Jinyan; Li, Xiaoping; Zhang, Bo; Zhao, Jian; Xu, Zhe; Wang, Maojun; Yu, Min; Yang, Zhenchuan; Wu, Wengang; Zhang, Yuming; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10
High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress 期刊论文
journal of semiconductors, 2014
Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer 期刊论文
ieee electron device letters, 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J.
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/16
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs 期刊论文
electronics letters, 2014
Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文
electronics letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13

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