Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

doi:10.1109/LED.2014.2322379

CORC > 北京大学 > 信息科学技术学院

	Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
	Liu, Shenghou ; Yang, Shu ; Tang, Zhikai ; Jiang, Qimeng ; Liu, Cheng ; Wang, Maojun ; Chen, Kevin J.
刊名	ieee electron device letters
	2014
关键词	Al2O3/AlN/GaN interfacial layer normally off MOS-channel-HEMT recess AL2O3/GAN MOSFET PERFORMANCE
DOI	10.1109/LED.2014.2322379
英文摘要	We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm(2)/V . s, a high ON/OFF drain current ratio of similar to 10(10), and low dynamic ON-resistance degradation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000338662100012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 34; ARTICLE; eekjchen@ust.hk; 7; 723-725; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/397118]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Shenghou,Yang, Shu,Tang, Zhikai,et al. Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer[J]. ieee electron device letters,2014.
APA	Liu, Shenghou.,Yang, Shu.,Tang, Zhikai.,Jiang, Qimeng.,Liu, Cheng.,...&Chen, Kevin J..(2014).Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer.ieee electron device letters.
MLA	Liu, Shenghou,et al."Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer".ieee electron device letters (2014).