High Temperature Characteristics of GaN-Based Inverter Integrated With   Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

doi:10.1109/LED.2013.2291854

CORC > 北京大学 > 信息科学技术学院

	High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT
	Xu, Zhe ; Wang, Jinyan ; Cai, Yong ; Liu, Jingqian ; Yang, Zhen ; Li, Xiaoping ; Wang, Maojun ; Yu, Min ; Xie, Bing ; Wu, Wengang ; Ma, Xiaohua ; Zhang, Jincheng ; Hao, Yue
刊名	ieee electron device letters
	2014
关键词	GaN inverter DCFL small variations ALGAN/GAN HEMTS CIRCUITS
DOI	10.1109/LED.2013.2291854
英文摘要	High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 degrees C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 degrees C, the fabricated inverter operates properly at a supply voltage (V-DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V-TH), 2.4 V for logic-low noise margin (NML), and 3.4 V for logic-high noise margin (NMH). Meanwhile, the inverter exhibits small variations from RT to 300 degrees C in terms of logic voltage swing, V-TH, NML, and NMH with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.; Engineering, Electrical & Electronic; SCI(E); EI; 2; ARTICLE; jywang@ime.pku.edu.cn; ycai2008@sinano.ac.cn; 1; 33-35; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152214]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Zhe,Wang, Jinyan,Cai, Yong,et al. High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT[J]. ieee electron device letters,2014.
APA	Xu, Zhe.,Wang, Jinyan.,Cai, Yong.,Liu, Jingqian.,Yang, Zhen.,...&Hao, Yue.(2014).High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT.ieee electron device letters.
MLA	Xu, Zhe,et al."High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT".ieee electron device letters (2014).