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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Understanding of DC degradation of ZnO varistor ceramics from the aspect of high-temperature relaxation 会议论文 作者:  Wu, Kangning;  Huang, Yuwei;  Xin, Lei;  Li, Jianying;  Li, Shengtao 收藏  |  浏览/下载：28/0  |  提交时间：2019/11/19 Emission of electron  High temperature  High temperature relaxation  Negatively charged  Positively charged  Schottky barriers  Zinc interstitials  ZnO Varistor Ceramics   Enhanced breakdown field of xSrCu3Ti4O12/(1- x)CaCu3Ti4O12composite ceramics 会议论文 作者:  Tang, Zhuang;  Huang, Yuwei;  Wu, Kangning;  Li, Jianying 收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26 Average grain size  Breakdown field  CCTO ceramics  Donor density  Grain size distribution  Schottky barriers  Sintering condition  Solid state method   Low-cost 13.56MHz rectifier based on organic diode 会议论文 2011 MRS Fall Meeting, Boston, MA, United states, November 28, 2011 - December 2, 2011 作者:  Wang, Hong;  Ji, Zhuoyu;  Shang, Liwei;  Chen, Yingping;  Lu, Congyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Electric rectifiers  Chemical modification  Costs  Diodes  Radio frequency identification (RFID)  Rectifying circuits  Semiconducting organic compounds  Hole injection barriers  Organic electronics  Radio-frequency-identification tags (RFID)  Rectification ratio  Rectifier circuit  Schottky contacts  Self-assembled layers  Voltage amplitude   Residual voltage caused by grain boundary in ZnO varistor ceramics 会议论文 作者:  Wang, Hui;  Li, Shengtao;  Li, Jianying 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/10 Grain-boundary barriers  Intrinsic defects  IV characteristics  Micro parameters  Residual voltage  Schottky barriers  Traditional composition  ZnO Varistor Ceramics   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES