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科研机构
半导体研究所 [12]
内容类型
期刊论文 [12]
发表日期
2009 [3]
2007 [1]
2006 [1]
2003 [1]
2002 [1]
2000 [3]
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半导体物理 [12]
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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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浏览/下载:72/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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浏览/下载:79/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 4, 页码: art. no. 042901
Wu GG
;
Li HR
;
Liang K
;
Yang R
;
Cao XL
;
Wang HY
;
An JM
;
Hu XW
;
Han DJ
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  |  
浏览/下载:79/31
  |  
提交时间:2010/03/08
GAMMA-RAY SPECTROSCOPY
X-RAY
SPECTROMETERS
Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes
期刊论文
optics communications, 2007, 卷号: 270, 期号: 2, 页码: 203-206
Quan, YJ (Quan, Yu-Jun)
;
Han, PD (Han, Pei-De)
;
Lu, XD (Lu, Xiao-Dong)
;
Ye, ZC (Ye, Zhi-Cheng)
;
Wu, L (Wu, Li)
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浏览/下载:90/0
  |  
提交时间:2010/03/29
optical interleaver
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:
Yang XH
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  |  
浏览/下载:30/0
  |  
提交时间:2010/04/11
LASERS
TEMPERATURE
PHOTOLUMINESCENCE
Resonant tunneling theory of planar quantum dot structures
期刊论文
physical review b, 2003, 卷号: 68, 期号: 7, 页码: art.no.075310
Xia JB
;
Li SS
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  |  
浏览/下载:55/0
  |  
提交时间:2010/08/12
WAVE-GUIDES
SPECTROSCOPY
CONDUCTANCE
TRANSPORT
RINGS
Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells
期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 287-292
Wan SP
;
Xia JB
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浏览/下载:45/0
  |  
提交时间:2010/08/12
quantum wells
semiconductors
piezoelectricity
optical properties
OPTICAL-ABSORPTION
GAN
HETEROSTRUCTURES
SPECTROSCOPY
CONSTANTS
ENERGIES
LIFETIME
SPECTRA
FIELDS
INN
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 1, 页码: 533-536
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:31/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
INAS ISLANDS
INP(001)
GROWTH
GAAS
SEMICONDUCTORS
THICKNESS
LASERS
INGAAS
SIZE
Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)
期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
1.3 MU-M
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
PHOTOLUMINESCENCE LINEWIDTH
EMISSION
LASERS
ENERGY
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
期刊论文
physica e, 2000, 卷号: 8, 期号: 2, 页码: 164-169
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
self-assembled quantum dots
InP substrate
high index
In(Ga
MBE
MOLECULAR-BEAM-EPITAXY
VAPOR-PHASE EPITAXY
GAAS
ISLANDS
PHOTOLUMINESCENCE
INP(001)
GROWTH
LASERS
Al)As/InAlAs/InP
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